SOFT-TERMINAL

文件：108.33 Kbytes 页数：3 Pages

MSYSTEM

爱模

丝印：100N3LLH6；Package：PowerFLAT；N-channel 30 V, 0.0025 Ω, 25 A PowerFLAT™ (5x6)STripFET™ VI DeepGATE™ Power MOSFET

Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate charge Application ■ Switching applications Description This product utilizes the 6th generation of design rules

文件：564.91 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：100N3LLH7；Package：PowerFLAT；N-channel 30 V, 0.0025 Ω, 25 A PowerFLAT™ (5x6) STripFET™ VII DeepGATE™ Power MOSFET

Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness Application ■ Switching applications Description This device utilizes the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. Th

文件：525.06 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-channel logic level 40 V, 2.7 mΩ max., 103 A, STripFET F8 Power MOSFET in a PowerFLAT 3.3x3.3 package

Features • MSL1 grade • 150 °C operating temperature • 100% avalanche tested • Low gate charge Qg Applications • Industrial tools, motor drives and equipment • Industrial motor control • Power supplies and converters Description The STL100N4LF8 is a 40 V N-channel enhancement mod

文件：800.15 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：105DN4L；Package：PowerFLAT；Automotive-grade dual N-channel 40 V, 3.5 mΩ typ., 40 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 DI

Features  AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness  Wettable flank package Applications  Switching applications Description This N-channel Power MOSFET utilizes

文件：965.86 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：105N4LF7；Package：PowerFLAT；Automotive-grade N-channel 40 V, 3.0 mΩ typ., 105 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package

Features  AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness  Wettable flank package Applications  Switching applications Description This N-channel Power MOSFET utilizes

文件：936.8 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：10LN80K5；Package：PowerFLAT；N-channel 800 V, 0.59 Ω typ., 6 A MDmesh™ K5 Power MOSFET in a PowerFLAT™ 5x6 VHV package

Features  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

文件：833.4 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：10N60M2；Package：PowerFLAT；N-channel 600 V, 0.580 廓 typ., 5.5 A MDmesh II Plus??low Qg Power MOSFET in a PowerFLAT??5x6 HV package

Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge

文件：1.02603 Mbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 550 m typ., 5.5 A, MDmeshTM M6 Power MOSFET in a PowerFLAT™ 5x6 HV package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：793.18 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.85 typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100 avalanche tested • Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device

文件：796.98 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体