SOFT-TERMINAL

文件：108.33 Kbytes 页数：3 Pages

MSYSTEM

爱模

丝印：STL2545N；Package：R-6-S1；TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS  Low voltage, high frequency rectifier  Freewheeling circuit and protection circuit of low voltage  solar cell junction box as a bypass diode FEATURES Low power loss, high efficiency High Operating Junction Temperature High reliability RoHS product

文件：405.11 Kbytes 页数：6 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：STL2545N；Package：R-6-E1；TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS  Low voltage, high frequency rectifier  Freewheeling circuit and protection circuit of low voltage  solar cell junction box as a bypass diode FEATURES Low power loss, high efficiency High Operating Junction Temperature High reliability RoHS product

文件：405.11 Kbytes 页数：6 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：STL25A45N；Package：R-6-S1；TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS  Low voltage, high frequency rectifier  Freewheeling circuit and protection circuit of low voltage  solar cell junction box as a bypass diode FEATURES Low power loss, high efficiency High Operating Junction Temperature High reliability RoHS product

文件：448.54 Kbytes 页数：6 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：STL25A45N；Package：R-6-E1；TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS  Low voltage, high frequency rectifier  Freewheeling circuit and protection circuit of low voltage  solar cell junction box as a bypass diode FEATURES Low power loss, high efficiency High Operating Junction Temperature High reliability RoHS product

文件：448.54 Kbytes 页数：6 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：100N3LLH6；Package：PowerFLAT；N-channel 30 V, 0.0025 Ω, 25 A PowerFLAT™ (5x6)STripFET™ VI DeepGATE™ Power MOSFET

Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate charge Application ■ Switching applications Description This product utilizes the 6th generation of design rules

文件：564.91 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：100N3LLH7；Package：PowerFLAT；N-channel 30 V, 0.0025 Ω, 25 A PowerFLAT™ (5x6) STripFET™ VII DeepGATE™ Power MOSFET

Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness Application ■ Switching applications Description This device utilizes the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. Th

文件：525.06 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

丝印：105DN4L；Package：PowerFLAT；Automotive-grade dual N-channel 40 V, 3.5 mΩ typ., 40 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 DI

Features  AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness  Wettable flank package Applications  Switching applications Description This N-channel Power MOSFET utilizes

文件：965.86 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：105N4LF7；Package：PowerFLAT；Automotive-grade N-channel 40 V, 3.0 mΩ typ., 105 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package

Features  AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness  Wettable flank package Applications  Switching applications Description This N-channel Power MOSFET utilizes

文件：936.8 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：10LN80K5；Package：PowerFLAT；N-channel 800 V, 0.59 Ω typ., 6 A MDmesh™ K5 Power MOSFET in a PowerFLAT™ 5x6 VHV package

Features  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

文件：833.4 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体