Automotive-grade N-channel 40 V, 3.3 mΩ typ., 108 A STripFETTM F7 Power MOSFET in a PowerFLATTM 5x6 package

Features  AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure tha

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Automotive-grade N-channel 100 V, 5 m typ., 107 A, STripFETTM F7 Power MOSFET in a PowerFLATTM 5x6 package

Features  AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure tha

文件：945.85 Kbytes 页数：15 Pages

STMICROELECTRONICS

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Automotive-grade N-channel 40 V, 2.5 m typ., 119 A STripFETTM F7 Power MOSFET in a PowerFLATTM 5x6 package

Features • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness • Wettable flank package Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced

文件：412.66 Kbytes 页数：17 Pages

STMICROELECTRONICS

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丝印：11N60M2E；Package：PowerFLAT；N-channel 600 V, 0.600 Ω typ., 5.5 A MDmesh™ M2 EP Power MOSFET in a PowerFLAT™ 5x6 HV package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100 avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhan

文件：618.25 Kbytes 页数：15 Pages

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丝印：11N65M5；Package：PowerFLAT；N-channel 650 V, 0.475 ??typ., 8.5 A MDmesh??M5 Power MOSFET in a PowerFLAT??5x5 package

Description This device is an N-channel Power MOSFET based on MDmesh™ M5 innovative vertical process technology combined with the wellknown PowerMESH™ horizontal layout. The resulting product offers extremely low onresistance, making it particularly suitable for applications requiring high po

文件：1.04176 Mbytes 页数：14 Pages

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600W Outdoor UPS Systems

Features •Weatherproof (IP65), UV resistant, outdoor enclosures •Powered from AC mains power and/or Solar •Interior space for customer electronics •Wall or Pole Mounting •Isolates Customer Equipment from Power Line Surges •High Quality AGM Sealed Lead Acid Batteries •Advanced battery charge

文件：228.99 Kbytes 页数：2 Pages

TYCONSYSTEMS

丝印：120N10F8；Package：PowerFLAT；N‑channel enhancement mode standard level 100 V, 4.6 mΩ max., 125 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package

Features • MSL1 grade • 175 °C operating temperature • 100 avalanche tested Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on-state resistance while reducing

文件：633.49 Kbytes 页数：15 Pages

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High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is design

文件：425.38 Kbytes 页数：14 Pages

STMICROELECTRONICS

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High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is design

文件：425.38 Kbytes 页数：14 Pages

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丝印：12N10；Package：PowerFLAT；N-channel 100 V, 11.3 mΩ typ., 12 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 3.3x3.3 package

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench

文件：587.15 Kbytes 页数：13 Pages

STMICROELECTRONICS

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