丝印：10N60M2；Package：PowerFLAT；N-channel 600 V, 0.580 廓 typ., 5.5 A MDmesh II Plus??low Qg Power MOSFET in a PowerFLAT??5x6 HV package

Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge

文件：1.02603 Mbytes 页数：16 Pages

STMICROELECTRONICS

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N-channel 600 V, 550 m typ., 5.5 A, MDmeshTM M6 Power MOSFET in a PowerFLAT™ 5x6 HV package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：793.18 Kbytes 页数：15 Pages

STMICROELECTRONICS

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N-channel 650 V, 0.85 typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100 avalanche tested • Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device

文件：796.98 Kbytes 页数：15 Pages

STMICROELECTRONICS

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Automotive-grade N-channel 40 V, 3.3 mΩ typ., 108 A STripFETTM F7 Power MOSFET in a PowerFLATTM 5x6 package

Features  AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure tha

文件：937.61 Kbytes 页数：14 Pages

STMICROELECTRONICS

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Automotive-grade N-channel 100 V, 5 m typ., 107 A, STripFETTM F7 Power MOSFET in a PowerFLATTM 5x6 package

Features  AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure tha

文件：945.85 Kbytes 页数：15 Pages

STMICROELECTRONICS

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Automotive-grade N-channel 40 V, 2.5 m typ., 119 A STripFETTM F7 Power MOSFET in a PowerFLATTM 5x6 package

Features • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness • Wettable flank package Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced

文件：412.66 Kbytes 页数：17 Pages

STMICROELECTRONICS

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丝印：11N60M2E；Package：PowerFLAT；N-channel 600 V, 0.600 Ω typ., 5.5 A MDmesh™ M2 EP Power MOSFET in a PowerFLAT™ 5x6 HV package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100 avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhan

文件：618.25 Kbytes 页数：15 Pages

STMICROELECTRONICS

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丝印：11N65M5；Package：PowerFLAT；N-channel 650 V, 0.475 ??typ., 8.5 A MDmesh??M5 Power MOSFET in a PowerFLAT??5x5 package

Description This device is an N-channel Power MOSFET based on MDmesh™ M5 innovative vertical process technology combined with the wellknown PowerMESH™ horizontal layout. The resulting product offers extremely low onresistance, making it particularly suitable for applications requiring high po

文件：1.04176 Mbytes 页数：14 Pages

STMICROELECTRONICS

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600W Outdoor UPS Systems

Features •Weatherproof (IP65), UV resistant, outdoor enclosures •Powered from AC mains power and/or Solar •Interior space for customer electronics •Wall or Pole Mounting •Isolates Customer Equipment from Power Line Surges •High Quality AGM Sealed Lead Acid Batteries •Advanced battery charge

文件：228.99 Kbytes 页数：2 Pages

TYCONSYSTEMS

丝印：120N10F8；Package：PowerFLAT；N‑channel enhancement mode standard level 100 V, 4.6 mΩ max., 125 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package

Features • MSL1 grade • 175 °C operating temperature • 100 avalanche tested Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on-state resistance while reducing

文件：633.49 Kbytes 页数：15 Pages

STMICROELECTRONICS

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