High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is design

文件：425.38 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is design

文件：425.38 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

高压快速切换NPN功率晶体管

The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in l • Integrated antiparallel collector-emitter diode \n• High voltage capability \n• Minimum lot-to-lot spread for reliable operation \n• Low spread of dynamic parameters \n• Large RBSOA \n• Very high switching speed;

ST

意法半导体

Package：TO-220-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 4A TO220

STMICROELECTRONICS

意法半导体

Package：TO-220-3 整包；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 4A TO220FP

STMICROELECTRONICS

意法半导体