丝印：11N60M2E；Package：PowerFLAT；N-channel 600 V, 0.600 Ω typ., 5.5 A MDmesh™ M2 EP Power MOSFET in a PowerFLAT™ 5x6 HV package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100 avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhan

文件：618.25 Kbytes 页数：15 Pages

STMICROELECTRONICS

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丝印：11N60M2EP；Package：TO-281；N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh™ M2 EP Power MOSFET in an I²PAKFP package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100 avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhan

文件：303.63 Kbytes 页数：13 Pages

STMICROELECTRONICS

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