2N7002

Marking：12；Package：SOT23；60 V, 300 mA N-channel Trench MOSFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusing TrenchMOSFETtechnology. 1.2Featuresandbenefits Suitableforlogiclevelgatedrive sources Veryfastswitching Surface-mountedpackage TrenchMOSFETtechnology 1.3Appl

3.0SMC12

Marking：12；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES Forsurfacemountedapplicationsinordertooptimizeboard space. Lowprofilepackage. Glasspassivatedjunction. Lowinductance. 3000Wpeakpulsepowercapabilityat10x1000uswaveform, repetitionrate(dutycycles):0.01 PlasticpackagehasUnderwritersLaboratoryFlammability.

7UL1T08FS

Marking：12；Package：fSV；CMOS Digital Integrated Circuits Silicon Monolithic

FunctionalDescription •2-InputANDGatewithLevelShifting Features (1)Wideoperatingtemperaturerange:Topr=-40to125 (2)Operatingsupplyvoltagerange:VCC=2.3Vto3.6V (3)Thehigh-levelinputvoltageisuptranslationtothepowersupplyvoltage. (4)Thehigh-levelinput

7UL1T08FU

Marking：12；Package：USV；CMOS Digital Integrated Circuits Silicon Monolithic

FunctionalDescription •2-InputANDGatewithLevelShifting Features (1)Wideoperatingtemperaturerange:Topr=-40to125 (2)Operatingsupplyvoltagerange:VCC=2.3Vto3.6V (3)Thehigh-levelinputvoltageisuptranslationtothepowersupplyvoltage. (4)Thehigh-levelinput

ASD12C

Marking：12；Package：SOD-323；1-Line Bi-directional TVS Diode

Features 500Wpeakpulsepower(8/20μs) Protectsonedataorpowerline Ultralowleakage:nAlevel Operatingvoltage:3.3V，5V,8V,12V,15V,24V, 36V,40V Ultralowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV C

BA178M12CP

Marking：12；Package：178M12CP；Three-Terminal Regulator

STRUTURE:SiliconMonolithicIntergratedCircuit TYPE:Three-TerminalRegulator FEATURES:Outputcurrentupto0.5A

CMZ12A

Marking：12；Package：3-4E1S；Zener Diode Silicon Epitaxial Planar

Applications •Surgeabsorber Features (1)Powerdissipation:PD=2W (2)Zenervoltage:Vz=12to51V (3)Theuseofsmall,thinsurface-mountpackageisoptimumwayforhigh-densitymounting. Nickname:M-FLATTM

D24V0H1U2LP-7B

Marking：12；Package：X1-DFN1006-2；24V UNI-DIRECTIONAL TVS DIODE

Features •LowProfilePackage(0.53mmMax)andUltra-SmallPCBFootprintArea(1.08mm×0.68mmMax)SuitableforCompactPortableElectronics •ProvidesESDProtectionperIEC61000-4-2Standard:Air±30kV,Contact±30kV •OneChannelofESDProtection •LowChannelInputCapacitance •Total

D24V0H1U2LP-7B

Marking：12；Package：X1-DFN1006-2；24V UNI-DIRECTIONAL TVS DIODE

Features •LowProfilePackage(0.53mmMax)andUltra-SmallPCBFootprintArea(1.08mm×0.68mmMax)SuitableforCompactPortableElectronics •ProvidesESDProtectionperIEC61000-4-2Standard:Air±30kV,Contact±30kV •OneChannelofESDProtection •LowChannelInputCapacitance •Total

DCSD12C-H

Marking：12；Package：SOD-323；1-Line Bi-directional TVS Diode

Features 550Wpeakpulsepower（8/20μs) Protectsonedataorpowerline Ultralowleakage：nAlevel Operatingvoltage：12V Lowclampingvoltage 2-pinleadlesspackage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC