丝印：12；Package：SOT23；60 V, 300 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology. 1.2 Features and benefits  Suitable for logic level gate drive sources  Very fast switching  Surface-mounted package  Trench MOSFET technology 1.3 Appl

文件：855.83 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：12；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES For surface mounted applications in order tooptimize board space. Low profile package. Glass passivated junction. Low inductance. 3000W peak pulse power capability at 10x1000us waveform, repetition rate (duty cycles):0.01 Plastic package has Underwriters Laboratory Flammability.

文件：325.35 Kbytes 页数：5 Pages

YFWDIODE

佑风微电子

丝印：12；Package：fSV；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • 2-Input AND Gate with Level Shifting Features (1) Wide operating temperature range: Topr = -40 to 125 (2) Operating supply voltage range: VCC = 2.3 V to 3.6 V (3) The high-level input voltage is up translation to the power supply voltage. (4) The high-level input

文件：172.57 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：12；Package：USV；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • 2-Input AND Gate with Level Shifting Features (1) Wide operating temperature range: Topr = -40 to 125 (2) Operating supply voltage range: VCC = 2.3 V to 3.6 V (3) The high-level input voltage is up translation to the power supply voltage. (4) The high-level input

文件：172.23 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：12；Package：SOD-323；1-Line Bi-directional TVS Diode

Features  500W peak pulse power (8/20μs)  Protects one data or power line  Ultra low leakage: nA level  Operating voltage: 3.3V，5V, 8V, 12V, 15V, 24V, 36V, 40V  Ultra low clamping voltage  Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV C

文件：2.01557 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：12；Package：178M12CP；Three-Terminal Regulator

STRUTURE : Silicon Monolithic Intergrated Circuit TYPE : Three-Terminal Regulator FEATURES : Output current up to 0.5A

文件：359.61 Kbytes 页数：6 Pages

ROHM

罗姆

丝印：12；Package：3-4E1S；Zener Diode Silicon Epitaxial Planar

Applications • Surge absorber Features (1) Power dissipation : PD = 2W (2) Zener voltage : Vz = 12 to 51V (3) The use of small, thin surface-mount package is optimum way for high-density mounting. Nickname: M-FLATTM

文件：266.72 Kbytes 页数：6 Pages

TOSHIBA

东芝

丝印：12；Package：X1-DFN1006-2；24V UNI-DIRECTIONAL TVS DIODE

Features • Low Profile Package (0.53mm Max) and Ultra-Small PCB Footprint Area (1.08mm × 0.68mm Max) Suitable for Compact Portable Electronics • Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV • One Channel of ESD Protection • Low Channel Input Capacitance • Total

文件：200.49 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：12；Package：X1-DFN1006-2；24V UNI-DIRECTIONAL TVS DIODE

Features • Low Profile Package (0.53mm Max) and Ultra-Small PCB Footprint Area (1.08mm × 0.68mm Max) Suitable for Compact Portable Electronics • Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV • One Channel of ESD Protection • Low Channel Input Capacitance • Total

文件：780.3 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：12；Package：SOD-323；1-Line Bi-directional TVS Diode

Features 550W peak pulse power（8 /20μs) Protects one data or power line Ultra low leakage：nA level Operating voltage：12V Low clamping voltage 2-pin leadless package Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC

文件：2.16028 Mbytes 页数：4 Pages

SY

顺烨电子