DTA123EUA

Marking：12；Package：SOT-323；PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)

Features 1)Built-InBiasingResistors,R1=R2=2.2kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesign

ESD12V88D-CBP

Marking：12；Package：DFN1006；Transient Voltage Suppressors for ESD Protection

Features 147~162WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsoneI/Oline(Bidirectional) Lowclampingvoltage Workingvoltages:5V~12V Lowleakagecurrent IEC61000-4-2(ESD)±15kV(air),±8kV(contact) IEC61000-4-4(EFT)40A(5/50ηs) Applications CellPhoneHandsetsandAc

ESD1Z2V5

Marking：12；Package：SOD-123；Transient Voltage Suppressors

Features Excellentclampingcapability Lowleakage Fastresponsetime

ESD5Z12

Marking：12；Package：SOD-523；Transient Voltage Suppressors

◆-CARforautomotiveandotherapplicationsrequiringuniquesiteand controlchangerequirements;AEC-Q101qualifiedandPPAPcapable Features ◆150Wattspeakpulsepower(tp=8/20μs) ◆Transientprotectionforhighspeeddatalinesto IEC61000-4-2(ESD)±15kV(air),±8kV(contact) IEC6

ESD5Z12

Marking：12；Package：SOD-523；Transient Voltage Suppressors

Features ◆150Wattspeakpulsepower(tp=8/20μs) ◆Transientprotectionforhighspeeddatalinesto IEC61000-4-2(ESD)±15kV(air),±8kV(contact) IEC61000-4-4(EFT)40A(5/50ns) ◆ProtectsOnePowerorI/OPort ◆Lowleakagecurrent ◆Lowoperatingandclampingvoltages ◆Solid-stat

LZ52C12W

Marking：12；Package：1206；SURFACE MOUNT ZENER DIODE

FEATURES •Forsurfacemountedapplication •Siliconepitaxialplanardiode •Ultrasmallsurfacemountpackage •Lowleakagecurrent •2tolerancedeviceofVz •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3)

PDTA115TE

Marking：12；Package：SC-75；PNP resistor-equipped transistors; R1 = 100 kW, R2 = open

Features *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts

PDTA144VK

Marking：12；Package：SC-59A；PNP resistor-equipped transistors; R1 = 47 kW, R2 = 10 kW

Features *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts

PDTA144VU

Marking：12；Package：SC-70；PNP resistor-equipped transistors; R1 = 47 kW, R2 = 10 kW

Features *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts

PDTC114TT

Marking：12；Package：SOT23；NPN resistor-equipped transistors; R1 = 10 kW, R2 = open

Features *Built-inbiasresistors *Simplifiescircuitdesign *100mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts