N-channel 30 V, 0.0011 廓, 35 A PowerFLAT??5x6 STripFET??VI DeepGATE??Power MOSFET

Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance

文件：781.07 Kbytes 页数：16 Pages

STMICROELECTRONICS

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丝印：160N4F7；Package：PowerFLAT；N-channel 40 V, 2.1 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench

文件：861.08 Kbytes 页数：18 Pages

STMICROELECTRONICS

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丝印：165N10F8；Automotive N‑channel 100 V, 3.2 mΩ max., 158 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package

Features • AEC-Q101 qualified • MSL1 grade • 175 °C maximum operating junction temperature • 100% avalanche tested • Low gate charge Qg • Wettable flank package Applications • Automotive motor control • Electro mobility Description The STL165N10F8AG is a 100 V N-channel enhancem

文件：940.53 Kbytes 页数：15 Pages

STMICROELECTRONICS

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N-channel 600 V, 0.30 typ., 8 A MDmesh™ M6 Power MOSFET in a PowerFLAT™ 5x6 HV package

Features  Reduced switching losses  Lower RDS(on) x area vs previous generation  Low gate input resistance  100 avalanche tested  Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：887.55 Kbytes 页数：15 Pages

STMICROELECTRONICS

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N-channel 600 V, 300 m typ., 10 A, MDmeshTM M6 Power MOSFET in a PowerFLAT™ 8x8 HV package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：580.24 Kbytes 页数：15 Pages

STMICROELECTRONICS

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丝印：18N60M2；Package：PowerFLAT；N-channel 600 V, 0.278 廓 typ., 9 A MDmesh II Plus??low Qg Power MOSFET in a PowerFLAT??5x6 HV package

Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency co

文件：946.02 Kbytes 页数：16 Pages

STMICROELECTRONICS

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N-channel 600 V, 255 m typ., 9 A, MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：792.39 Kbytes 页数：15 Pages

STMICROELECTRONICS

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Automotive-grade N-channel 30 V, 23 mΩ typ., 10 A, STripFETTM H6 Power MOSFET in a PowerFLAT 5x6 package

Features • AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss • Logic level • Wettable flank package Description This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trenc

文件：659.65 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 255 m typ., 11 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：575.02 Kbytes 页数：14 Pages

STMICROELECTRONICS

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丝印：200N45F7；Package：PowerFLAT；N-channel 45 V, 1.4 mΩ typ., 120 A STripFET ™ F7 Power MOSFET in a PowerFLAT™ 5x6 package

Features  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench

文件：892.51 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体