Automotive N‑channel logic level 40 V, 1.0 mΩ max., 304 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package

Features • AEC-Q101 qualified • MSL1 grade • 175 °C maximum operating junction temperature • 100% avalanche tested • Low gate charge Qg • Wettable flank package Applications • Automotive motor control • Body and convenience • Chassis and safety • Power train for ICE Description

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N-CHANNEL 30V - 0.008ohm - 30A PowerFLAT??LOW GATE CHARGE STripFET??MOSFET

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique “STripFET™” technology. The resulting transistor shows extremely low on-resistance and minimal gate charge. The new PowerFLAT™ package allows a significant reduction in board space without compromising performance

文件：169.07 Kbytes 页数：6 Pages

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Switching applications

Description This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched am

文件：1.26206 Mbytes 页数：17 Pages

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丝印：320N4LF8；Package：PowerFLAT5x6；N-channel enhancement mode logic level 40 V, 0.8 mΩ max., 360 A, STripFET F8 Power MOSFET in a PowerFLAT 5x6 package

Features MSL1 grade 175 °C operating temperature 100 avalanche tested Applications Switching applications Description This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure. ensures very low on-state resistance while reducing internal c

文件：617.14 Kbytes 页数：16 Pages

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Automotive N‑channel enhancement mode logic level 40 V, 0.75 mΩ max., 373 A STripFET F8 Power MOSFET in a PowerFLAT 5x6

Features • AEC-Q101 qualified • MSL1 grade • 175 °C operating temperature • 100 avalanche tested • Wettable flank package Description This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on-state resistance while re

文件：644.92 Kbytes 页数：15 Pages

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N-channel 600 V, 125 m typ., 21 A, MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 HV package

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM

文件：345.21 Kbytes 页数：14 Pages

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N-channel 600 V, 0.115 typ., 21 A MDmeshTM M6 Power MOSFET in a PowerFLATTM 8x8 HV package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：379.14 Kbytes 页数：15 Pages

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N-CHANNEL 60V - 0.024ohm - 34A PowerFLAT??LOW GATE CHARGE STripFET?줚I MOSFET

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique “STripFET™” technology. The resulting transistor shows extremely low onresistance and minimal gate charge. The new PowerFLAT™ package allow a significant reduction in board space without compramising performance.

文件：114.48 Kbytes 页数：6 Pages

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N-CHANNEL 30V - 0.0055ohm - 35A PowerFLAT??LOW GATE CHARGE STripFET??MOSFET

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique “STripFET™” technology. The resulting transistor shows extremely low on-resistance and minimal gate charge. The new PowerFLAT™ package allows a significant reduction in board space without compromising performance

文件：183.6 Kbytes 页数：6 Pages

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丝印：36DN6F7；Package：PowerFLAT；Dual N-channel 60 V, 23 mΩ typ., 33 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 double island package

Features  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This dual N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced

文件：760.97 Kbytes 页数：16 Pages

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