TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS  Low voltage, high frequency rectifier  Freewheeling circuit and protection circuit of low voltage  solar cell junction box as a bypass diode FEATURES Low power loss, high efficiency High Operating Junction Temperature High reliability RoHS product

文件：448.54 Kbytes 页数：6 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

Very low gate charge

Description This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features • Very low on-resistance RDS(on) • Very low gate charge • High avalanche ruggednes

文件：947.74 Kbytes 页数：15 Pages

STMICROELECTRONICS

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丝印：260N4F7；Package：PowerFLAT；N-channel 40 V, 0.9 mΩ typ., 120 A, STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench

文件：850.58 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.182 typ., 20 A, MDmeshTM DM2 Power MOSFET in a PowerFLAT™ 8x8 HV package

Features • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fastrecovery diode series.

文件：385.79 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.160 廓, 19 A PowerFLAT??8x8 HV ultra low gate charge MDmesh??II Power MOSFET

Description This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched am

文件：697.79 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：L27N15；Package：PowerFLAT；N-CHANNEL 150V - 0.045 W - 27A PowerFLAT LOW GATE CHARGE STripFET MOSFET

■ TYPICAL RDS(on) = 0.045 Ω ■ IMPROVED DIE-TO-FOOTPRINT RATIO ■ VERY LOW PROFILE PACKAGE (1mm MAX) ■ VERY LOW THERMAL RESISTANCE ■ VERY LOW GATE CHARGE DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize inpu

文件：132.48 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

丝印：285N4F7；Package：PowerFLAT；Automotive-grade N-channel 40 V, 0.9 mΩ typ., 120 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package

Features  Designed for automotive applications and AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness  Wettable flank package Applications  Switching applications Descripti

文件：942.7 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.155 typ., 21 A MDmeshTM DM2 Power MOSFET in a PowerFLATTM 8x8 HV package

Features  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100 avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode seri

文件：758.08 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.140 typ., 19 A MDmeshTM M2 Power MOSFET in a PowerFLATTM 8x8 HV package

Features  Extremely low gate charge  Excellent output capacitance (COSS) profile  100 avalanche tested  Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the devi

文件：824.76 Kbytes 页数：15 Pages

STMICROELECTRONICS

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N-CHANNEL 30V - 0.0055ohm - 28A PowerFLAT??LOW GATE CHARGE STripFET??MOSFET

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique “STripFET™” technology. The resulting transistor shows extremely low on-resistance and minimal gate charge. The new PowerFLAT™ package allows a significant reduction in board space without compromising performance

文件：117.35 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体