1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power

1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power • Designed for application in fiber-optic networks • Laser diode with Multi-Quantum Well structure • Suitable for bit rates up to 1 Gbit/s • Ternary photodiode at rear mirror for monitoring and control of radiant power • Hermetically

文件：129.58 Kbytes 页数：4 Pages

SIEMENS

西门子

1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power

1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power • Designed for application in fiber-optic networks • Laser diode with Multi-Quantum Well structure • Suitable for bit rates up to 1 Gbit/s • Ternary photodiode at rear mirror for monitoring and control of radiant power • Hermetically

文件：129.58 Kbytes 页数：4 Pages

SIEMENS

西门子

1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power

1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power • Designed for application in fiber-optic networks • Laser diode with Multi-Quantum Well structure • Suitable for bit rates up to 1 Gbit/s • Ternary photodiode at rear mirror for monitoring and control of radiant power • Hermetically

文件：129.58 Kbytes 页数：4 Pages

SIEMENS

西门子

1300 nm Laser in Receptacle Package, Low Power

1300 nm Laser in Receptacle Package, Low Power • Designed for application in fiber-optic networks • Laser diode with Multi-Quantum Well structure • Suitable for bit rates up to 1 Gbit/s • Ternary photodiode at rear mirror for monitoring and control of radiant power • Hermetically sealed subco

文件：80.26 Kbytes 页数：4 Pages

SIEMENS

西门子

Automotive-grade dual N-channel 40 V, 9 mΩ typ., 18 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 DI

Features  AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness  Wettable flank package Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced

文件：1.01814 Mbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.061 廓 typ., 22.5 A MDmesh??V Power MOSFET in a PowerFLAT??8x8 HV package

Description This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched am

文件：1.06852 Mbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：58N3LH5；Package：PowerFLAT；Automotive-grade N-channel 30 V, 0.0076 ??typ., 56 A STripFET??H5 Power MOSFET in a PowerFLAT??5x6 package

Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class. Features • Designed for automotive applicatio

文件：711.04 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 650V - 1.5ohm - 4.2A PowerFLAT??Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

文件：119.87 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

丝印：60N10F7；Package：PowerFLAT；N-channel 100 V, 0.0145 ??typ., 12 A, STripFET??VII DeepGATE?? Power MOSFET in a PowerFLAT??5x6 package

Description This device is an N-channel Power MOSFET developed using the 7th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Features • Ultra low on-resistance • 100 avalanche tested Appli

文件：1.2922 Mbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：60N32N3LL；Package：PowerFLAT；Dual N-channel 30 V, 0.005 廓, 15 A PowerFLAT??5x6 asymmetrical double island, STripFET??Power MOSFET

Description This device is a dual N-channel Power MOSFET which utilizes the latest generation of design rules for ST's proprietary STripFET™ V and STripFET™ VI DeepGATE™ technology. The lowest available RDS(on)* Qg in this chip scale package renders the device suitable for the most demandin

文件：1.42618 Mbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体