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STL81005H

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power • Designed for application in fiber-optic networks • Laser diode with Multi-Quantum Well structure • Suitable for bit rates up to 1 Gbit/s • Ternary photodiode at rear mirror for monitoring and control of radiant power • Hermetically

文件:129.41 Kbytes 页数:4 Pages

SIEMENS

西门子

STL81005X

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power • Designed for application in fiber-optic networks • Laser diode with Multi-Quantum Well structure • Suitable for bit rates up to 1 Gbit/s • Ternary photodiode at rear mirror for monitoring and control of radiant power • Hermetically

文件:129.41 Kbytes 页数:4 Pages

SIEMENS

西门子

STL81007G

1550 nm Laser in Receptacle Package, Low Power

1550 nm Laser in Receptacle Package, Low Power • Designed for applications in fiber optic networks • Laser Diode with Multi-Quantum Well structure • Suitable for bit rates up to 1 Gbit/s • Ternary Photodiode at rear mirror for monitoring and control of radiant power • Hermetically sealed subc

文件:550.88 Kbytes 页数:4 Pages

SIEMENS

西门子

STL81007X

1550 nm Laser in Receptacle Package, Low Power

1550 nm Laser in Receptacle Package, Low Power • Designed for applications in fiber optic networks • Laser Diode with Multi-Quantum Well structure • Suitable for bit rates up to 1 Gbit/s • Ternary Photodiode at rear mirror for monitoring and control of radiant power • Hermetically sealed subc

文件:550.88 Kbytes 页数:4 Pages

SIEMENS

西门子

STL8N65M2

N-channel 650 V, 1 typ., 4 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100 avalanche tested • Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device

文件:848.88 Kbytes 页数:15 Pages

STMICROELECTRONICS

意法半导体

STL8N6LF3

丝印:8N6LF3;Package:PowerFLAT;Automotive-grade N-channel 60 V, 22.5 mΩ typ., 7.8 A STripFET™ F3 Power MOSFET in a PowerFLAT™ 5x6 package

Features  AEC-Q101 qualified  Logic level VGS(th)  175 °C maximum junction temperature  100 avalanche rated  Wettable flank package Applications  Switching applications Description This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed

文件:976.39 Kbytes 页数:15 Pages

STMICROELECTRONICS

意法半导体

STL8P4LLF6

丝印:8P4F6;Package:PowerFLAT;P-channel 40 V, 0.0175 廓 typ.,8 A, STripFET??F6 Power MOSFET in a PowerFLAT??3.3 x 3.3 package

Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness

文件:372.48 Kbytes 页数:14 Pages

STMICROELECTRONICS

意法半导体

STL90N10F7

丝印:90N10F7;Package:PowerFLAT;N-channel 100 V, 7 mΩ typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench

文件:842.79 Kbytes 页数:16 Pages

STMICROELECTRONICS

意法半导体

STL90N10F7_V01

N-channel 100 V, 7 mΩ typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench

文件:842.79 Kbytes 页数:16 Pages

STMICROELECTRONICS

意法半导体

STL90N3LLH6

丝印:90N3LLH6;Package:PowerFLAT;N-channel 30 V, 0.0038 廓 typ., 24 A STripFET??VI DeepGATE?? Power MOSFET in PowerFLAT??5x6 package

Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Features • RDS(on) * Qg industry benchmark • Extremely low on-resistance

文件:725.82 Kbytes 页数:16 Pages

STMICROELECTRONICS

意法半导体

技术参数

  • 特性:

    高CV值,长寿命品,超小型.高度为5mm~9mm,105 ℃ 3000~5000小时

  • 使用温度范围:

    -40~+105℃

  • 稳定电压:

    6.3~50

  • 标准容量:

    1~1000

供应商型号品牌批号封装库存备注价格
ST/意法
2023+
TO-92
2500
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站
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ST
QFP
1000
正品原装--自家现货-实单可谈
询价
SENTELIC
2025+
SSOP16
3827
全新原厂原装产品、公司现货销售
询价
ST
1650+
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7500
只做原装进口,假一罚十
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ST/意法
25+
ST/意法
40
就找我吧!--邀您体验愉快问购元件!
询价
ST
2308+
SOT323-5
6800
十年专业专注 优势渠道商正品保证公司现货
询价
STMicroelectronics
24+
原厂原装
6000
进口原装正品假一赔十,货期7-10天
询价
ST
22+
8PowerSMD Flat Leads
9000
原厂渠道,现货配单
询价
ST/意法
23+
CHIP28QFN
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
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ST
24+
09+
27
原装现货假一罚十
询价
更多STL供应商 更新时间2024-4-11 18:15:00