1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power • Designed for application in fiber-optic networks • Laser diode with Multi-Quantum Well structure • Suitable for bit rates up to 1 Gbit/s • Ternary photodiode at rear mirror for monitoring and control of radiant power • Hermetically

文件：129.41 Kbytes 页数：4 Pages

SIEMENS

西门子

1550 nm Laser in Receptacle Package, Low Power

1550 nm Laser in Receptacle Package, Low Power • Designed for applications in fiber optic networks • Laser Diode with Multi-Quantum Well structure • Suitable for bit rates up to 1 Gbit/s • Ternary Photodiode at rear mirror for monitoring and control of radiant power • Hermetically sealed subc

文件：550.88 Kbytes 页数：4 Pages

SIEMENS

西门子

1550 nm Laser in Receptacle Package, Low Power

1550 nm Laser in Receptacle Package, Low Power • Designed for applications in fiber optic networks • Laser Diode with Multi-Quantum Well structure • Suitable for bit rates up to 1 Gbit/s • Ternary Photodiode at rear mirror for monitoring and control of radiant power • Hermetically sealed subc

文件：550.88 Kbytes 页数：4 Pages

SIEMENS

西门子

N-channel 650 V, 1 typ., 4 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100 avalanche tested • Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device

文件：848.88 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：8N6LF3；Package：PowerFLAT；Automotive-grade N-channel 60 V, 22.5 mΩ typ., 7.8 A STripFET™ F3 Power MOSFET in a PowerFLAT™ 5x6 package

Features  AEC-Q101 qualified  Logic level VGS(th)  175 °C maximum junction temperature  100 avalanche rated  Wettable flank package Applications  Switching applications Description This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed

文件：976.39 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：8P4F6；Package：PowerFLAT；P-channel 40 V, 0.0175 廓 typ.,8 A, STripFET??F6 Power MOSFET in a PowerFLAT??3.3 x 3.3 package

Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness

文件：372.48 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：90N10F7；Package：PowerFLAT；N-channel 100 V, 7 mΩ typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench

文件：842.79 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 100 V, 7 mΩ typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench

文件：842.79 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：90N3LLH6；Package：PowerFLAT；N-channel 30 V, 0.0038 廓 typ., 24 A STripFET??VI DeepGATE?? Power MOSFET in PowerFLAT??5x6 package

Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Features • RDS(on) * Qg industry benchmark • Extremely low on-resistance

文件：725.82 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：90N6F7；Package：PowerFLAT；N-channel 60 V, 4.6 mΩ typ., 90 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench

文件：505.58 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体