丝印：8N6LF3；Package：PowerFLAT；Automotive-grade N-channel 60 V, 22.5 mΩ typ., 7.8 A STripFET™ F3 Power MOSFET in a PowerFLAT™ 5x6 package

Features  AEC-Q101 qualified  Logic level VGS(th)  175 °C maximum junction temperature  100 avalanche rated  Wettable flank package Applications  Switching applications Description This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed

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STMICROELECTRONICS

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