型号：RM8N700HD；Package：TO-263；N-Channel Super Junction Power MOSFET II

Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant

文件：804.71 Kbytes 页数：10 Pages

型号：RM8N700IP；Package：TO-251；N-Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses Small package Uitra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Halogen-free.

文件：431.25 Kbytes 页数：10 Pages

型号：RM8N700LD；Package：TO-252；N-Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses Small package Uitra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Halogen-free.

文件：431.25 Kbytes 页数：10 Pages

型号：RM8N700T2；Package：TO-220；N-Channel Super Junction Power MOSFET II

Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant

文件：804.71 Kbytes 页数：10 Pages

型号：RM8N700TI；Package：TO-220F；N-Channel Super Junction Power MOSFET II

Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant

文件：804.71 Kbytes 页数：10 Pages