N-channel 60 V, 4.6 mΩ typ., 90 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench

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STMICROELECTRONICS

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丝印：9N60M2；Package：PowerFLAT5x6HV；N-channel 600 V, 0.76 ??typ., 4.8 A MDmesh II Plus??low Qg Power MOSFET in a PowerFLAT??5x6 HV package

Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge

文件：1.04937 Mbytes 页数：16 Pages

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N-CHANNEL 300V - 0.36ohm - 9A PowerFLAT??Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

文件：225.57 Kbytes 页数：8 Pages

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P-channel 20 V, 0.0195 ??typ., 9 A STripFET??H7 Power MOSFET in a PowerFLAT??3.3x3.3 package

Description This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low onresistance. The device also offers ultra-low capacitances for higher switching frequency operations. Features  Very low on-resistance  Very low capacit

文件：513.62 Kbytes 页数：14 Pages

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丝印：9P3L；Package：PowerFLAT3.3x3.3；P-channel -30 V, 12 m廓 typ., -9 A STripFET??H6 Power MOSFET in a PowerFLAT??3.3x3.3 package

Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness 

文件：628.21 Kbytes 页数：14 Pages

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Automotive P-channel enhancement mode Power MOSFET STripFET F6 -40 V, -8 A in a PowerFLAT 3.3x3.3 package

Features • AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss • Logic level Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resul

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Suretime Outdoor PIR Black

Features & Benefits Manual override (Pulse) for extended light on times. Adjustable time ON setting. Adjustable lux level. Knockouts to allow cable entry from underneath the PIR.

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TIMEGUARD

LED LAMPS CLUSTER DRIVER

DESCRIPTION The STLC1, a device realized with the well established BCD technology, is a fixed frequency fully monolithic SMPS, with three independent smart low side driver, primarily intended for automotive rear led lamps driving. The output voltage is set using a simple resistor divider. Therma

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VOICE OVER IP PROCESSOR

GENERAL DESCRIPTION STMicroelectronics’ STLC1502 is a high performance VoIP processor specially targeted for the time effective design of IP-Phones and analog gateway applications bundled with a comprehensive embedded software solution. The main characteristics of the STLC1502 IP processor are a

文件：526.99 Kbytes 页数：81 Pages

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NorthenLite G.lite DMT Transceiver

■ ATM transport ■ Forward Error correction & interleaving ■ Framing & de-framing ■ DMT modulation and demodulation ■ Start-up & showtime control processing In addition, the STLC1510 provides the following features: ■ Serial and Parallel network interface at backend to CO equipment ■ Serial

文件：426.51 Kbytes 页数：40 Pages

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