丝印：90N6F7；Package：PowerFLAT；N-channel 60 V, 4.6 mΩ typ., 90 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench

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STMICROELECTRONICS

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