丝印：9110DW；Package：SOT-223；PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.4V(max)@Ic/Ib= -500mA / -50mA  High collector current capability  Excellent DC current gain characteristics  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 Standard  NPN com

文件：396 Kbytes 页数：6 Pages

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丝印：9110DW；Package：SOT-223；PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.35V(max)@Ic/Ib= -500mA / -50mA  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 Standard  NPN complement: PBHV8110DW

文件：408.12 Kbytes 页数：6 Pages

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丝印：9110DW；Package：SOT-223；PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.35V(max)@Ic/Ib= -500mA / -50mA  High collector current capability  Excellent DC current gain characteristics  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 Standard  NPN co

文件：408.48 Kbytes 页数：6 Pages

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