Automotive P-channel enhancement mode Power MOSFET STripFET F6 -40 V, -8 A in a PowerFLAT 3.3x3.3 package

Features • AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss • Logic level Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resul

文件：419.33 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Automotive P-channel enhancement mode Power MOSFET STripFET F6 -40 V, -8 A in a PowerFLAT 3.3x3.3 package

This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. • AEC-Q101 qualified \n• Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss \n• Logic level;

ST

意法半导体

QFN8

STM

信盛精工

上传：深圳市力拓辉电子有限公司

QFN8

ST

上传：深圳市赛特兴科技有限公司

仿真器

ST

上传：深圳市励创源科技有限公司