Automotive-grade dual N-channel 40 V, 9 mΩ typ., 18 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 DI

Features  AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness  Wettable flank package Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced

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STMICROELECTRONICS

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汽车级双路N沟道40 V、9 mOhm典型值、18 A STripFET F7功率MOSFET，PowerFLAT 5x6双岛封装

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. • AEC-Q101 qualified \n• Among the lowest RDS(on) on the market \n• Excellent FoM (figure of merit) \n• Low Crss/Ciss ratio for EMI immunity \n• High avalanche ruggedness \n• Wettable flank package;

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PowerFLAT-5x5-12

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上传：深圳市拓亿芯电子有限公司

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DFN5X6

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上传：深圳市富芯乐电子科技有限公司

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QFN8

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上传：深圳市赛特兴科技有限公司