N-channel 650 V, 0.061 廓 typ., 22.5 A MDmesh??V Power MOSFET in a PowerFLAT??8x8 HV package

Description This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched am

文件：1.06852 Mbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N沟道650 V、0.061 Ohm典型值、22.5 A MDmesh M5功率MOSFET，PowerFLAT 8x8 HV封装

This device is an N-channel Power MOSFET based on MDmesh™ M5 innovative vertical process technology combined with the well known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior • Extremely low RDS(on) \n• Low gate charge and input capacitance \n• Excellent switching performance \n• 100% avalanche tested;

ST

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N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

文件：1.36435 Mbytes 页数：22 Pages

STMICROELECTRONICS

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Isc N-Channel MOSFET Transistor

文件：301.47 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V, 0.056 廓 typ., 42 A MDmesh??V Power MOSFET in I짼PAK, TO-220, TO-220FP and D짼PAK packages

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

文件：1.36435 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体