N-channel 650 V, 0.056 廓 typ., 42 A MDmesh??V Power MOSFET in I짼PAK, TO-220, TO-220FP and D짼PAK packages

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

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STMICROELECTRONICS

意法半导体

Isc N-Channel MOSFET Transistor

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ISC

无锡固电

N沟道650 V、0.056 Ohm典型值、42 A MDmesh M5功率MOSFET，TO-247封装

These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and supe • Extremely low RDS(on) \n• Excellent switching performance \n• 100% avalanche tested;

ST

意法半导体

丝印：57N65M5；Package：TO-247；N-channel 650 V, 0.056 Ω typ., 42 A MDmesh™ V Power MOSFETs in TO-247 and TO-247 long leads packages

Features • Worldwide best RDS(on)*area amongst the silicon based devices • Higher VDSS rating, high dv/dt capability • Excellent switching performance • Easy to drive, 100 avalanche tested Applications • Switching applications Description These devices are N-channel MDmesh™ V Power M

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STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.056 廓 typ., 42 A, MDmesh??V Power MOSFET in a TO247-4 package

Description This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched am

文件：1.22203 Mbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N沟道650 V、0.056 Ohm典型值、42 A MDmesh M5功率MOSFET，TO247-4封装

该器件是一款N-沟道MDmesh™ V功率MOSFET，其基于创新的专有垂直工艺技术，并结合了意法半导体公司知名的PowerMESH™水平布局结构。因此这款产品具有极低的导通电阻，在硅基功率MOSFET中首屈一指，非常适合需要超高功率密度和卓越效率的应用。 • 更高的VDS额定值 \n• 更高的dv/dt性能 \n• 通过额外的驱动源引脚实现出色的开关性能 \n• 易于驱动 \n• 经过100%雪崩测试;

ST

意法半导体