N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

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STMICROELECTRONICS

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Isc N-Channel MOSFET Transistor

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ISC

无锡固电

N沟道650 V、0.056 Ohm典型值、42 A MDmesh M5功率MOSFET，TO-220封装

These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and supe • Extremely low RDS(on) \n• Low gate charge and input capacitance \n• Excellent switching performance \n• 100% avalanche tested;

ST

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Isc N-Channel MOSFET Transistor

文件：417.73 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V, 0.056 廓 typ., 42 A MDmesh??V Power MOSFET in I짼PAK, TO-220, TO-220FP and D짼PAK packages

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

文件：1.36435 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.056 Ω typ., 42 A MDmesh™ V Power MOSFETs in TO-247 and TO-247 long leads packages

Features • Worldwide best RDS(on)*area amongst the silicon based devices • Higher VDSS rating, high dv/dt capability • Excellent switching performance • Easy to drive, 100 avalanche tested Applications • Switching applications Description These devices are N-channel MDmesh™ V Power M

文件：1.02166 Mbytes 页数：17 Pages

STMICROELECTRONICS

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