丝印：58N3LH5；Package：PowerFLAT；Automotive-grade N-channel 30 V, 0.0076 ??typ., 56 A STripFET??H5 Power MOSFET in a PowerFLAT??5x6 package

Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class. Features • Designed for automotive applicatio

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STMICROELECTRONICS

意法半导体

汽车级N沟道30 V、0.0076 Ohm、56 A STripFET H5功率MOSFET，PowerFLAT 5x6封装

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class. • Designed for automotive applications and AEC-Q101 qualified \n• Low on-resistance \n• High avalanche ruggedness \n• Low gate drive power loss \n• Wettable flank package;

ST

意法半导体

PowerFLAT-5x5-12

ST

上传：深圳市拓亿芯电子有限公司

DFN5X6

ST/意法

上传：深圳市富芯乐电子科技有限公司

QFN8

ST

上传：深圳市赛特兴科技有限公司