首页 >STL18N60M2>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

STL18N60M2

丝印:18N60M2;Package:PowerFLAT;N-channel 600 V, 0.278 廓 typ., 9 A MDmesh II Plus??low Qg Power MOSFET in a PowerFLAT??5x6 HV package

Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency co

文件:946.02 Kbytes 页数:16 Pages

STMICROELECTRONICS

意法半导体

STL18N60M2

N沟道600 V、0.278 Ohm典型值、9 A MDmesh M2功率MOSFET,PowerFLAT 5x6 HV封装

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

STP18N60M2

N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFETs in D2PAK,I2PAK, TO-220 and TO-247 packages

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100 avalanche tested • Zener-protected Application • Switching applications • LLC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2

文件:861.3 Kbytes 页数:27 Pages

STMICROELECTRONICS

意法半导体

STP18N60M2

Low gate input resistance

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

文件:1.21822 Mbytes 页数:21 Pages

STMICROELECTRONICS

意法半导体

STW18N60M2

N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFETs in D2PAK,I2PAK, TO-220 and TO-247 packages

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100 avalanche tested • Zener-protected Application • Switching applications • LLC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2

文件:861.3 Kbytes 页数:27 Pages

STMICROELECTRONICS

意法半导体

技术参数

  • Package:

    PowerFLAT 5x6 HV

  • Grade:

    Industrial

  • VDSS(V):

    600

  • RDS(on)_max(@ VGS=10V)(Ω):

    0.308

  • Drain Current (Dc)_max(A):

    9

  • PTOT_max(W):

    57

  • Qg_typ(nC):

    21.5

供应商型号品牌批号封装库存备注价格
ST/意法
25+
QFN
32360
ST/意法全新特价STL18N60M2即刻询购立享优惠#长期有货
询价
ST
23+
PowerFLAT 5x6 HV
12500
ST系列在售,可接长单
询价
STMicroelectronics
21+
PowerFlat?(5x6)HV
3000
100%进口原装!长期供应!绝对优势价格(诚信经营)!
询价
STM
25+
DFN-8
375
就找我吧!--邀您体验愉快问购元件!
询价
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
22+
NA
3000
加我QQ或微信咨询更多详细信息,
询价
ST/意法
23+
DFN5X6
50000
全新原装正品现货,支持订货
询价
ST
22+
4PowerFlat? HV
9000
原厂渠道,现货配单
询价
ST
25+
QFN
4000
原厂原装,价格优势
询价
ST/意法
23+
QFN
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
更多STL18N60M2供应商 更新时间2025-12-1 19:22:00