N-channel 600 V, 0.30 typ., 8 A MDmesh™ M6 Power MOSFET in a PowerFLAT™ 5x6 HV package

Features  Reduced switching losses  Lower RDS(on) x area vs previous generation  Low gate input resistance  100 avalanche tested  Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

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STMICROELECTRONICS

意法半导体

N沟道600 V、0.29 Ohm典型值、12 A MDmesh M6功率MOSFET，PowerFLAT 5x6 HV封装

新型MDmesh™M6技术融合了众所周知的MDmesh™系列中SuperJunction MOSFET的最新技术。意法半导体在其上一代MDmesh™器件技术基础上构建了新型M6工艺， 不仅改进了RDS(on) 密度，同时提升了开关特性，为实现更高的应用效率提供了友好的用户体验。 • 减少开关损耗 \n• 与上一代相比，具有更低的RDS(on) \n• 低栅极输入电阻 \n• 经过100％雪崩测试 \n• 稳压保护;

ST

意法半导体

Package：8-PowerVDFN；包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 600V POWERFLAT HV

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.260 Ω typ., 12 A MDmesh M6 Power MOSFET in a DPAK package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：339.42 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.26 typ., 12 A MDmeshTM M6 Power MOSFET in a TO-220FP package

Features  Reduced switching losses  Lower RDS(on) x area vs previous generation  Low gate input resistance  100 avalanche tested  Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：712.64 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体