N-channel 600 V, 0.260 Ω typ., 12 A MDmesh M6 Power MOSFET in a DPAK package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

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N沟道600 V、0.29 Ohm典型值、12 A MDmesh M6功率MOSFET，DPAK封装

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one • Reduced switching losses \n• Lower RDS(on) per area vs previous generation \n• Low gate input resistance \n• 100% avalanche tested \n• Zener-protected;

ST

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N-channel 600 V, 0.26 typ., 12 A MDmeshTM M6 Power MOSFET in a TO-220FP package

Features  Reduced switching losses  Lower RDS(on) x area vs previous generation  Low gate input resistance  100 avalanche tested  Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

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N-channel 600 V, 0.30 typ., 8 A MDmesh™ M6 Power MOSFET in a PowerFLAT™ 5x6 HV package

Features  Reduced switching losses  Lower RDS(on) x area vs previous generation  Low gate input resistance  100 avalanche tested  Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

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