N-channel 600 V, 255 m typ., 11 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：575.02 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 255 mOhm typ., 11 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV package

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one • Reduced switching losses \n• Lower RDS(on) per area vs previous generation \n• Low gate input resistance \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

N-channel 600 V, 255 m typ., 11 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：575.02 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

ST
QFN

ST

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STM
DFN5X6

STM

信盛

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