Automotive-grade N-channel 30 V, 23 mΩ typ., 10 A, STripFETTM H6 Power MOSFET in a PowerFLAT 5x6 package

Features • AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss • Logic level • Wettable flank package Description This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trenc

文件：659.65 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

汽车级N沟道30 V、25 mOhm典型值、10 A STripFET H6功率MOSFET，PowerFLAT 5x6封装

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. • AEC-Q101 qualified \n• Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss \n• Logic level \n• Wettable flank package;

ST

意法半导体

N-Channel MOSFET uses advanced trench technology

文件：1.1011 Mbytes 页数：4 Pages

DOINGTER

杜因特

High avalanche ruggedness

文件：863.55 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体