600W Outdoor UPS Systems

Features •Weatherproof (IP65), UV resistant, outdoor enclosures •Powered from AC mains power and/or Solar •Interior space for customer electronics •Wall or Pole Mounting •Isolates Customer Equipment from Power Line Surges •High Quality AGM Sealed Lead Acid Batteries •Advanced battery charge

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TYCONSYSTEMS

丝印：120N10F8；Package：PowerFLAT；N‑channel enhancement mode standard level 100 V, 4.6 mΩ max., 125 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package

Features • MSL1 grade • 175 °C operating temperature • 100 avalanche tested Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on-state resistance while reducing

文件：633.49 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is design

文件：425.38 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is design

文件：425.38 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：12N10；Package：PowerFLAT；N-channel 100 V, 11.3 mΩ typ., 12 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 3.3x3.3 package

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench

文件：587.15 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：12N3L；Package：PowerFLAT；N-channel 30 V, 0.0079 廓, 12 A, PowerFLAT??(3.3 x 3.3) STripFET??V Power MOSFET

Description The STL12N3LLH5 is a 30 V N-channel STripFET™ V. This Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM). Features ■ RDS(on) * Qg i

文件：453.1 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 390 m typ., 6.4 A MDmeshTM M6 Power MOSFET in a PowerFLAT™ 5x6 HV package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：798.28 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Very low intrinsic capacitance

Description This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched am

文件：1.38052 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 20 V, 0.002, 28 A STripFET V Power MOSFET in PowerFLAT 5x6 package

文件：655.21 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

Wettable flank package

文件：971.02 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体