STL12

600W Outdoor UPS Systems

Features •Weatherproof(IP65),UVresistant,outdoorenclosures •PoweredfromACmainspowerand/orSolar •Interiorspaceforcustomerelectronics •WallorPoleMounting •IsolatesCustomerEquipmentfromPowerLineSurges •HighQualityAGMSealedLeadAcidBatteries •Advancedbatterycharge

STL120N10F8

Marking：120N10F8；Package：PowerFLAT；N‑channel enhancement mode standard level 100 V, 4.6 mΩ max., 125 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package

Features •MSL1grade •175°Coperatingtemperature •100avalanchetested Applications •Switchingapplications Description ThisN-channelPowerMOSFETutilizesSTripFETF8technologyfeaturingan enhancedtrenchgatestructure. Itensuresverylowon-stateresistancewhilereducing

STL128DN

High voltage fast-switching NPN power transistor

Description Thedeviceismanufacturedusinghighvoltagemultiepitaxialplanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesacellularemitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA.Thedeviceisdesign

STL128DNFP

High voltage fast-switching NPN power transistor

Description Thedeviceismanufacturedusinghighvoltagemultiepitaxialplanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesacellularemitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA.Thedeviceisdesign

STL12N10F7

Marking：12N10；Package：PowerFLAT；N-channel 100 V, 11.3 mΩ typ., 12 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 3.3x3.3 package

Features •AmongthelowestRDS(on)onthemarket •ExcellentFoM(figureofmerit) •LowCrss/CissratioforEMIimmunity •Highavalancheruggedness Applications •Switchingapplications Description ThisN-channelPowerMOSFETutilizesSTripFET™F7technologywithan enhancedtrench

STL12N3LLH5

Marking：12N3L；Package：PowerFLAT；N-channel 30 V, 0.0079 廓, 12 A, PowerFLAT??(3.3 x 3.3) STripFET??V Power MOSFET

Description TheSTL12N3LLH5isa30VN-channel STripFET™V.ThisPowerMOSFETtechnologyis amongthelatestimprovements,whichhavebeen especiallytailoredtoachieveverylowon-state resistanceprovidingalsooneofthebest-in-class figureofmerit(FOM). Features ■RDS(on)*Qgi

STL12N60M6

N-channel 600 V, 390 m typ., 6.4 A MDmeshTM M6 Power MOSFET in a PowerFLAT™ 5x6 HV package

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Description ThenewMDmesh™M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof

STL12N65M5

Very low intrinsic capacitance

Description ThisdeviceisanN-channelMDmesh™VPowerMOSFETbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedam

STL120N2VH5

N-channel 20 V, 0.002, 28 A STripFET V Power MOSFET in PowerFLAT 5x6 package

STL120N4F6AG

Wettable flank package