汽车级N沟道40 V、2.9 mOhm典型值、55 A STripFET F6功率MOSFET，PowerFLAT 5x6封装

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. • AEC-Q101 qualified \n• Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss \n• Wettable flank package;

ST

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Wettable flank package

文件：971.02 Kbytes 页数：15 Pages

STMICROELECTRONICS

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N-Channel 40 -V (D-S) MOSFET

文件：970.79 Kbytes 页数：7 Pages

VBSEMI

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N-channel 40 V, 3.8 m廓 , 80 A, TO-220 STripFET??VI DeepGATE??Power MOSFET

文件：746.11 Kbytes 页数：13 Pages

STMICROELECTRONICS

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