N-channel 40 V, 3.8 m廓 , 80 A, TO-220 STripFET??VI DeepGATE??Power MOSFET

文件：746.11 Kbytes 页数：13 Pages

STMICROELECTRONICS

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N-Channel 40 -V (D-S) MOSFET

文件：970.79 Kbytes 页数：7 Pages

VBSEMI

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N沟道40 V、3.8 mOhm、80 A STripFET(TM) VI DeepGATE(TM) 功率MOSFET，TO-220封装

This device is 40 V N-channel STripFET™ VI Power MOSFET based on the ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages. • Standard threshold drive \n• 100% avalanche tested;

ST

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N-channel 40 V, 3.5 m廓 , 80 A, DPAK, D짼PAK STripFET??VI DeepGATE??Power MOSFET

文件：998.25 Kbytes 页数：18 Pages

STMICROELECTRONICS

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N-Channel 4 -V (D-S) MOSFET

文件：1.00332 Mbytes 页数：8 Pages

VBSEMI

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N-channel 40 V, 3.5 m廓 , 80 A, DPAK, D짼PAK STripFET??VI DeepGATE??Power MOSFET

文件：998.25 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体