N沟道40 V、3.5 mOhm典型值、80 A STripFET F6功率MOSFET，D2PAK封装

These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. • Designed for automotive applications and AEC-Q101 qualified \n• Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

ST

意法半导体

N-channel 40 V, 3.5 m廓 , 80 A, DPAK, D짼PAK STripFET??VI DeepGATE??Power MOSFET

文件：998.25 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-channel 40 V, 3.5 m廓 , 80 A, DPAK, D짼PAK STripFET??VI DeepGATE??Power MOSFET

文件：998.25 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-Channel 4 -V (D-S) MOSFET

文件：1.00332 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-channel Enhancement Mode Power MOSFET

Features VDS= 40V, ID= 80A RDS(ON)

文件：1.13583 Mbytes 页数：4 Pages

Bychip

百域芯