N-channel 600 V, 390 m typ., 6.4 A MDmeshTM M6 Power MOSFET in a PowerFLAT™ 5x6 HV package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

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STMICROELECTRONICS

意法半导体

N沟道600 V、390 mOhm典型值、6.4 A MDmesh M6功率MOSFET，PowerFLAT 5x6 HV封装

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one • Reduced switching losses \n• Lower RDS(on) per area vs previous generation \n• Low gate input resistance \n• 100% avalanche tested \n• Zener-protected;

ST

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ST/意法
POWERFLAT5X6

ST/意法

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QFN

ST

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STM
DFN5X6

STM

信盛

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