丝印：120N10F8；Package：PowerFLAT；N‑channel enhancement mode standard level 100 V, 4.6 mΩ max., 125 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package

Features • MSL1 grade • 175 °C operating temperature • 100 avalanche tested Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on-state resistance while reducing

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STMICROELECTRONICS

意法半导体

N-沟道增强模式标准级100V，最高4.6mohm，125A STripFET F8功率MOSFET（采用PowerFLAT 5x6封装）

This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure.\n\n It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching. • MSL1 grade \n• 175 °C operating temperature \n• 100% avalanche tested;

ST

意法半导体

POWERFLAT5X6

ST/意法

上传：深圳庞田科技有限公司

QFN

ST

上传：深圳市向鸿伟业电子有限公司

DFN5X6

STM

信盛精工

上传：深圳市金芯世纪电子有限公司