Automotive-grade N-channel 40 V, 3.0 mOhm typ., 55 A STripFET F6 in a PowerFLAT 5x6 package

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with anew trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) inall packages.\n • Designed for automotive applications and AEC-Q101 qualified\n• Very low on-resistance\n• Very low gate charge• High avalanche ruggedness\n• Low gate drive power loss\n• Wettable flank package;

ST

意法半导体

High avalanche ruggedness

文件：935.12 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-Channel 40 V (D-S) MOSFET

文件：1.07752 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-channel 40 V, 3.1 m廓, 80 A DPAK, D짼PAK STripFET??VI DeepGATE??Power MOSFET

文件：897.83 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-Channel MOSFET uses advanced trench technology

文件：1.32818 Mbytes 页数：5 Pages

DOINGTER

杜因特