N-channel 40 V, 3.1 m廓, 80 A DPAK, D짼PAK STripFET??VI DeepGATE??Power MOSFET

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STMICROELECTRONICS

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N-Channel MOSFET uses advanced trench technology

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DOINGTER

杜因特

N沟道40 V、3.1 mOhm、80 A STripFET(TM) VI DeepGATE(TM) 功率MOSFET，DPAK封装

This product is a 40 V N-channel STripFET™ VI Power MOSFET based on the ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. • Logic level drive \n• 100% avalanche tested;

ST

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High avalanche ruggedness

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STMICROELECTRONICS

意法半导体