N-channel 650 V, 0.62 Ohm typ., 5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.\n • Extremely low gate charge\n• Excellent output capacitance (COSS) profile• 100% avalanche tested\n• Zener-protected;

ST

意法半导体

Zener-protected

文件：472.58 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.42 typ., 8 A MDmeshTM M2 Power MOSFET in a TO-220 package

Features  Extremely low gate charge  Excellent output capacitance (COSS) profile  100 avalanche tested  Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the devi

文件：675.95 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

Extremely low gate charge

文件：941.62 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

Extremely low gate charge

文件：843.19 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体