N-channel 650 V, 0.42 Ohm typ., 8 A MDmesh M2 Power MOSFET in TO-220 package

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. \n • Extremely low gate charge\n• Excellent output capacitance (COSS) profile• 100% avalanche tested\n• Zener-protected;

ST

意法半导体

N-channel 650 V, 0.42 typ., 8 A MDmeshTM M2 Power MOSFET in a TO-220 package

Features  Extremely low gate charge  Excellent output capacitance (COSS) profile  100 avalanche tested  Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the devi

文件：675.95 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：POWER MOSFET

STMICROELECTRONICS

意法半导体

Extremely low gate charge

文件：941.62 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

Extremely low gate charge

文件：843.19 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

Zener-protected

文件：472.58 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体