N沟道650 V、0.42 Ohm典型值、8 A MDmesh M2功率MOSFET，TO-220FP封装

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• 100% avalanche tested \n• Zener-protected;

ST

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Extremely low gate charge

文件：843.19 Kbytes 页数：13 Pages

STMICROELECTRONICS

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Zener-protected

文件：472.58 Kbytes 页数：15 Pages

STMICROELECTRONICS

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N-channel 650 V, 0.42 typ., 8 A MDmeshTM M2 Power MOSFET in a TO-220 package

Features  Extremely low gate charge  Excellent output capacitance (COSS) profile  100 avalanche tested  Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the devi

文件：675.95 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体