N-channel 600 V, 0.260 Ohm typ., 6 A MDmesh(TM) II Power MOSFET in PowerFLAT(TM) 8x8 HV package

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most • 100% avalanche tested\n• Low input capacitance and gate charge• Low gate input resistance;

ST

意法半导体

N-channel 600 V, 0.260 廓, 6 A PowerFLAT??8x8 HV MDmesh??II Power MOSFET

文件：610.57 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.26 廓 typ., 13 A MDmesh??II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247

Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding

文件：1.18003 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.27 廓, 13 A MDmesh??II Power MOSFET in TO-220, TO-220FP, TO-247, D짼PAK and I짼PAK

文件：998.82 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel Mosfet Transistor

文件：303.88 Kbytes 页数：2 Pages

ISC

无锡固电