STL62P3LLH6

Package：PowerFLAT；P-channel -30 V, 9 m廓 typ., -62 A STripFET??H6 Power MOSFET in a PowerFLAT 5x6 package

Description ThisdeviceisaP-channelPowerMOSFET developedusingtheSTripFET™H6technology, withanewtrenchgatestructure.Theresulting PowerMOSFETexhibitsverylowRDS(on)inall packages Features Verylowon-resistance Verylowgatecharge Highavalancheruggedness 

STL62P3LLH6

P沟道30 V、0.009 Ohm典型值、62 A STripFET H6功率MOSFET，PowerFLAT 5x6封装; • Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.\n\n