N沟道600 V、0.350 Ohm典型值、8 A MDmesh DM2功率MOSFET，PowerFLAT 5x6 HV封装

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shi • Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

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N-channel 600 V, 0.350 (ohm) typ., 8 A MDmesh DM2 Power MOSFET in a PowerFLAT 5x6 HV package

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STMICROELECTRONICS

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N-channel 600 V, 0.310 廓 typ., 11 A MDmesh??DM2 Power MOSFET in a TO-220 package

文件：458.59 Kbytes 页数：13 Pages

STMICROELECTRONICS

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Fast-recovery body diode

文件：839.87 Kbytes 页数：16 Pages

STMICROELECTRONICS

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N-channel 600 V, 0.310 (ohm) typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP package

文件：719.96 Kbytes 页数：13 Pages

STMICROELECTRONICS

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