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STP13N60DM2

N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a TO-220 package

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shi • Fast-recovery body diode\n• Extremely low gate charge and input capacitance\n• Low on-resistance• 100% avalanche tested\n• Extremely high dv/dt ruggedness\n• Zener-protected;

ST

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STP13N60DM2

丝印:13N60DM2;Package:TO-220;N-channel 600 V, 0.310 廓 typ., 11 A MDmesh??DM2 Power MOSFET in a TO-220 package

文件:458.59 Kbytes 页数:13 Pages

STMICROELECTRONICS

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STD13N60DM2

Fast-recovery body diode

文件:839.87 Kbytes 页数:16 Pages

STMICROELECTRONICS

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STF13N60DM2

N-channel 600 V, 0.310 (ohm) typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP package

文件:719.96 Kbytes 页数:13 Pages

STMICROELECTRONICS

意法半导体

STL13N60DM2

N-channel 600 V, 0.350 (ohm) typ., 8 A MDmesh DM2 Power MOSFET in a PowerFLAT 5x6 HV package

文件:894.79 Kbytes 页数:15 Pages

STMICROELECTRONICS

意法半导体

技术参数

  • Package:

    TO-220AB

  • Grade:

    Industrial

  • VDSS(V):

    600

  • RDS(on)_max(@ VGS=10V)(Ω):

    0.365

  • Drain Current (Dc)_max(A):

    11

  • PTOT_max(W):

    110

  • Qg_typ(nC):

    19

  • Features:

    Fast recovery diode

  • Reverse Recovery Time_typ(ns):

    90

  • Qrr_typ(nC):

    252

  • Peak Reverse Current_nom(A):

    5.6

供应商型号品牌批号封装库存备注价格
STM
19+
50000
TO-220-3
询价
ST(意法半导体)
25+
N/A
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
TOSHIBA/东芝
23+
TO-220F
69820
终端可以免费供样,支持BOM配单!
询价
ST(意法半导体)
2447
TO-220-3
115000
1000个/盒一级代理专营品牌!原装正品,优势现货,长
询价
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
ST/意法半导体
23+
TO-220-3
6900
全新原装正品现货,支持订货
询价
ST/意法半导体
25+
TO-220-3
30000
原装正品公司现货,假一赔十!
询价
ST/意法半导体
24+
TO-220-3
6000
全新原装深圳仓库现货有单必成
询价
ST/意法半导体
2022+
TO-220-3
6900
原厂原装,假一罚十
询价
ST/意法半导体
21+
TO-220-3
8080
只做原装,质量保证
询价
更多STP13N60DM2供应商 更新时间2026-1-30 9:03:00