N沟道600 V、0.310 Ohm典型值、11 A MDmesh DM2功率MOSFET，TO-220FP封装

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shi • Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

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N-channel 600 V, 0.310 (ohm) typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP package

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STMICROELECTRONICS

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N-channel 600 V, 0.350 (ohm) typ., 8 A MDmesh DM2 Power MOSFET in a PowerFLAT 5x6 HV package

文件：894.79 Kbytes 页数：15 Pages

STMICROELECTRONICS

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N-channel 600 V, 0.310 廓 typ., 11 A MDmesh??DM2 Power MOSFET in a TO-220 package

文件：458.59 Kbytes 页数：13 Pages

STMICROELECTRONICS

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