N沟道600 V、0.278 Ohm典型值、11 A MDmesh M2功率MOSFET，PowerFLAT 8x8 HV封装

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

Extremely low gate charge

文件：770.83 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

ST
QFN

ST

上传：深圳市向鸿伟业电子有限公司

STM
DFN5X6

STM

信盛

上传：深圳市金芯世纪电子有限公司

ST
DFN5X6

ST

上传：深圳诚思涵科技有限公司