丝印：12N10；Package：PowerFLAT；N-channel 100 V, 11.3 mΩ typ., 12 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 3.3x3.3 package

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench

文件：587.15 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 100 V, 11.3 mΩ typ., 12 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.\n • Among the lowest RDS(on) on the market\n• Excellent FoM (figure of merit)• Low Crss/Ciss ratio for EMI immunity\n• High avalanche ruggedness;

ST

意法半导体

ST/意法
POWERFLAT5X6

ST/意法

上传：深圳庞田科技有限公司

ST
QFN

ST

上传：深圳市向鸿伟业电子有限公司

STM
DFN5X6

STM

信盛

上传：深圳市金芯世纪电子有限公司