STL12N10F7

Marking：12N10；Package：PowerFLAT；N-channel 100 V, 11.3 mΩ typ., 12 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 3.3x3.3 package

Features •AmongthelowestRDS(on)onthemarket •ExcellentFoM(figureofmerit) •LowCrss/CissratioforEMIimmunity •Highavalancheruggedness Applications •Switchingapplications Description ThisN-channelPowerMOSFETutilizesSTripFET™F7technologywithan enhancedtrench

RM12N100LD

Marking：12N100；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

Description TheRM12N100LDusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures VDS=100V,ID=12A RDS(ON)

RM12N100S8

Marking：12N100；Package：SOP-8；N-Channel Super Trench Power MOSFET

Description TheRM12N100S8usesSuperTrenchtechnologythatis uniquelyoptimizedtoprovidethemostefficienthigh frequencyswitchingperformance.Bothconductionand switchingpowerlossesareminimizedduetoanextremely lowcombinationofRDS(ON)andQg.Thisdeviceisidealfor high

TSG12N10AT

Marking：12N10AT；Package：DFN5X6；100V N-Channel DTMOS