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Marking：12N100；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET Description TheRM12N100LDusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures VDS=100V,ID=12A RDS(ON) | RECTRON Rectron Semiconductor | RECTRON | ||
Marking：12N100；Package：SOP-8；N-Channel Super Trench Power MOSFET Description TheRM12N100S8usesSuperTrenchtechnologythatis uniquelyoptimizedtoprovidethemostefficienthigh frequencyswitchingperformance.Bothconductionand switchingpowerlossesareminimizedduetoanextremely lowcombinationofRDS(ON)andQg.Thisdeviceisidealfor high | RECTRON Rectron Semiconductor | RECTRON |
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