RM12N100S8中文资料RECTRON数据手册PDF规格书

厂商型号	RM12N100S8
功能描述	N-Channel Super Trench Power MOSFET
丝印标识	12N100
封装外壳	SOP-8
文件大小	371.48 Kbytes
页面数量	7 页
生产厂商	Rectron Semiconductor
企业简称	RECTRON
中文名称	Rectron Semiconductor官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-5-29 9:10:00
人工找货	RM12N100S8价格和库存，欢迎联系客服免费人工找货

Description

The RM12N100S8 uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of RDS(ON) and Qg. This device is ideal for

high-frequency switching and synchronous rectification.

General Features

VDS =100V,ID =12A

RDS(ON)=8mΩ (typical) @ VGS=10V

RDS(ON)=11mΩ (typical) @ VGS=4.5V

Excellent gate charge x RDS(on) product(FOM)

Very low on-resistance RDS(on)

150 °C operating temperature

Pb-free lead plating

100% UIS tested

Application

DC/DC Converter

Ideal for high-frequency switching and

synchronous rectification

Halogen-free