丝印：12N100；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

Description The RM12N100LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =12A RDS(ON)

文件：401.18 Kbytes 页数：6 Pages

RECTRON

丽正国际

MOSFET

Rectron

丽正国际

N-Channel Enhancement Mode MOSFET

文件：231.04 Kbytes 页数：4 Pages

DACO

罡境电子

N-Channel Enhancement Mode MOSFET

文件：238.98 Kbytes 页数：4 Pages

DACO

罡境电子

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

文件：82.12 Kbytes 页数：4 Pages

IXYS

艾赛斯