丝印：12N100；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

Description The RM12N100LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =12A RDS(ON)

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RECTRON

丽正

MOSFET

Rectron

丽正

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

文件：82.12 Kbytes 页数：4 Pages

IXYS

艾赛斯

HiPerRF Power MOSFETs

VDSS = 1000V ID25 = 12A RDS(on) ≤ 1.05Ω trr ≤ 250ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr Features • RF capable MOSFETs • Double metal process for low gate resistance • Rugged polysilicon gate cell structure •

文件：99.7 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

文件：82.12 Kbytes 页数：4 Pages

IXYS

艾赛斯