丝印：12N10；Package：PowerFLAT；N-channel 100 V, 11.3 mΩ typ., 12 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 3.3x3.3 package

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench

文件：587.15 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：12N100；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

Description The RM12N100LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =12A RDS(ON)

文件：401.18 Kbytes 页数：6 Pages

RECTRON

丽正国际

丝印：12N100；Package：SOP-8；N-Channel Super Trench Power MOSFET

Description The RM12N100S8 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

文件：371.48 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：12N10AT；Package：DFN5X6；100V N-Channel DTMOS

文件：676.33 Kbytes 页数：7 Pages

WUMC

紫光国微

N-Channel 100 V (D-S) MOSFET

APPLICATIONS • Primary Side Switch

文件：407.38 Kbytes 页数：5 Pages

EVVOSEMI

翊欧

N-Channel 100 V (D-S) MOSFET

文件：1.68514 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

12A, 100V N-CHANNEL POWER MOSFET

文件：194.56 Kbytes 页数：5 Pages

UTC

友顺

N-Channel 100 V (D-S) MOSFET

文件：443.06 Kbytes 页数：5 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

N-CHANNEL POWER MOSFET

文件：239.75 Kbytes 页数：6 Pages

UTC

友顺

N-Channel MOSFET uses advanced trench technology

文件：1.35052 Mbytes 页数：6 Pages

DOINGTER

杜因特